Microscopic Bit-Level Wear-Leveling for NAND Flash Memory

نویسندگان

  • Yong Song
  • Woomin Hwang
  • Ki-Woong Park
  • Kyu Ho Park
چکیده

By microscopically observing widely used data files, we identified the considerable room for life time improvement in NAND flash memory, which is due to the discovery of a non-uniformity in bit-level data patterns. In an attempt to exploit the discovery, we propose a novel bit-level wear-leveling scheme. Instead of considering only the view of page-level or block-level, we incorporate the nonuniformity in data encoding patterns into wear-leveling scheme. Because of its orthogonality to the existing block-level wear-leveling approaches, our solution can be adopted over the existing solutions without considerable overhead and extend NAND flash’s life span up to 36% in case of SLC.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A page-granularity wear-leveling (PGWL) strategy for NAND flash memory-based sink nodes in wireless sensor networks

Sink nodes are the data centers of wireless sensor networks (WSNs), and the storage management scheme for such nodes is vital, particularly in applications such as wireless multimedia sensor networks that involve the collection of massive amounts of data. NAND flash memory is often employed in sink nodes because of its excellent characteristics. Because the lifetime of NAND flash memory is high...

متن کامل

Prediction of Elapsed Time based Wear Leveling for NAND Flash Memory in Embedded Systems

In recent years, many storage systems use NAND flash memory increasingly as their secondary storages. NAND flash memory has non-volatile memory characteristics with low power, low latency and high reliability. On the other hand, NAND flash memory has different issue, compared to existing secondary storages, which is the characteristics such as erase-before-write, low endurance and different ope...

متن کامل

Rejuvenator:A Static Wear Leveling Algorithm for Flash memory

NAND flash memory has the potential to become the storage alternative of the future due to its better performance and low power requirements. However reliability is still a critical issue in using NAND flash memory for large scale enterprise applications. The number of times a block can be reliably erased is limited in a NAND flash memory. A wear leveling algorithm helps to prevent the early we...

متن کامل

PTL: PRAM translation layer

In this paper, we attempt to replace NAND Flash memory with PRAM, while PRAM initially targets replacing NOR Flash memory. To achieve it, we need to handle wear-leveling issue of PRAM since the maximum number of writes in PRAM is only 10. Thus, we have proposed PRAM Translation Layer (PTL) to resolve endurance problem for a PRAM-based storage system. We modified FlashSim to support both PRAM an...

متن کامل

C-Lash: A Cache System for Optimizing NAND Flash Memory Performance and Lifetime

NAND flash memories are the most important storage media in mobile computing and tend to be less confined to this area. Nevertheless, it is not mature enough to allow a widespread use. This is due to poor write operations' performance caused by its internal intricacies. The major constraint of such a technology is the reduced number of erases operations which limits its lifetime. To cope with t...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013